Size- and position-controlled Ge nanocrystals separated by high-k dielectrics

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dc.contributor.authorLehninger, D.
dc.contributor.authorHoneit, F.
dc.contributor.authorRafaja, D.
dc.contributor.authorKlemm, V.
dc.contributor.authorRöder, C.
dc.contributor.authorKhomenkova, Larysa
dc.contributor.authorSchneider, F.
dc.contributor.authorBorany, J. von
dc.contributor.authorHeitmann, J.
dc.date.accessioned2022-07-19T08:50:44Z
dc.date.available2022-07-19T08:50:44Z
dc.date.issued2022
dc.description.abstractGermanium nanocrystals embedded in high-k dielectric matrices are of main interest for infrared sensing application, as a role model for Ge-based nanoelectronics passivation or for nonvolatile memory devices. The capability of the size control of those nanocrystals via rapid thermal processing of superlattice structures is shown for the [Ge–TaZrOx/TaZrOx]n, [Ge–TaZrOx/SiO2/TaZrOx]6, and [ TaZrOx/Ge–SiO2]n superlattice systems. All superlattices were deposited by radiofrequency magnetron sputtering. Transmission electron microscopy (TEM) imaging confirms the formation of spherically shaped nanocrystals. Raman scattering proved the crystallization of Ge above 700°C. The TaZrOx crystallizes above 770°C, associated with a phase separation of Ta2O5 and ZrO2 as confirmed by x-ray diffraction. For the composite layers having 3 nm and 6 nm thickness, the size of the Ge nanocrystals correlates with the deposited layer thickness. Thicker composite layers (above 9 nm) form two fractions of nanocrystals with different sizes. An additional SiO2 layer in the [Ge– TaZrOx/SiO2/TaZrOx]6 superlattice stacks facilitates the formation of larger and better separated Ge nanocrystals. The deposition of Ge-SiO2 composite layers separated by pure TaZrOx illustrates the barrier effect of TaZrOx against Ge diffusion. All three material systems allow the controlled formation of Ge nanocrystals in amorphous matrices at temperatures above 700 and below 770°C.en_US
dc.identifier.citationSize- and position-controlled Ge nanocrystals separated by high-k dielectrics / D. Lehninger, F. Honeit, D. Rafaja, V. Klemm, C. Röder, L. Khomenkova, F. Schneider, J. von Borany, J. Heitmann // MRS Bulletin. - 2022. - [Article in press]. - https://doi.org/10.1557/s43577-022-00311-8en_US
dc.identifier.issn0883-7694
dc.identifier.urihttps://doi.org/10.1557/s43577-022-00311-8
dc.identifier.urihttps://ekmair.ukma.edu.ua/handle/123456789/23471
dc.language.isoenuk_UA
dc.relation.sourceMRS Bulletinen_US
dc.statusfirst publisheduk_UA
dc.subjectgermanium nanocrystalsen_US
dc.subjectsensing applicationen_US
dc.subjecttransmission electron microscopyen_US
dc.subjectRaman scatteringen_US
dc.subjectGe nanocrystalsen_US
dc.subjectarticleen_US
dc.titleSize- and position-controlled Ge nanocrystals separated by high-k dielectricsen_US
dc.typeArticleuk_UA
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