Two excitation pathways of Pr3+ ion emission in HfO2:Si:Pr films depending on crystalline phase transformations in annealing

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dc.contributor.authorGarcia Andrade, Maria Alejandra
dc.contributor.authorTorchynska, T.
dc.contributor.authorCasas Espinola, Jose Luis
dc.contributor.authorVel´azquez Lozada, E.
dc.contributor.authorPolupan, G.
dc.contributor.authorKhomenkova, Larysa
dc.contributor.authorGourbilleau, F.
dc.date.accessioned2023-05-31T06:21:46Z
dc.date.available2023-05-31T06:21:46Z
dc.date.issued2023
dc.description.abstractThe impact of annealing on the emission and transformation of the crystalline phases in Si rich HfO2:Pr films was investigated by analyzing the morphology, chemical composition, structure, and photoluminescence (PL) characteristics. Films were prepared by RF magnetron sputtering and monitored as-prepared and after annealing at 1000 ◦C for 5–60 min. Emission through host HfO2 defects has only been detected in spectra of as-prepared Si rich HfO2:Pr films. Heat treatment for 30 min stimulates a phase transformation together with the appearance of a tetragonal HfO2 phase and Si quantum dot (QDs). This last process is accompanied by appearance of bright emission of rare earth (RE) ions Pr3+ related to the transitions in the 4f energy levels. Additional annealing for 60 min stimulates the complete oxidation of the Si QDs with the formation of the SiO2 phase along with partial destruction of a tetragonal HfO2 phase. This last process is accompanied by the significant increase of the intensity of Pr3+ ion emission. Two forms of luminescence excitation in 4f energy levels of Pr3+ ions are discussed, related to energy transfer to Pr3+ ions, first from Si QDs and then from host defects in HfO2. These changes in the excitation pathways of Pr3+ ion emissions are stimulated by the transformations of the crystalline phases in the thermal treatment together with the generation of host HfO2 defects. Hafnia-based materials doped with RE elements are interesting for telecommunication technology and applications in waveguides and optoelectronic devices.en_US
dc.identifier.citationTwo excitation pathways of Pr3+ ion emission in HfO2:Si:Pr films depending on crystalline phase transformations in annealing / M. A. Garcia Andrade, T. Torchynska, J. L. Casas Espinola, E. Velázquez Lozada, G. Polupan, L. Khomenkova, F. Gourbilleau // Journal of Luminescence. - 2023. - Vol. 258. - Article number 119789. - https://doi.org/10.1016/j.jlumin.2023.119789en_US
dc.identifier.issn0022-2313
dc.identifier.urihttps://doi.org/10.1016/j.jlumin.2023.119789
dc.identifier.urihttps://ekmair.ukma.edu.ua/handle/123456789/25248
dc.language.isoen
dc.relation.sourceJournal of Luminescenceen_US
dc.statusfirst publisheduk_UA
dc.subjectSi rich HfO2:Pr filmsen_US
dc.subjectRare earth (RE) ion Pr3+en_US
dc.subjectbright emissionen_US
dc.subjecttwo excitation pathwaysen_US
dc.subjectarticleen_US
dc.titleTwo excitation pathways of Pr3+ ion emission in HfO2:Si:Pr films depending on crystalline phase transformations in annealingen_US
dc.typeArticleuk_UA
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