Comprehensive investigation of Er2O3 thin films grown with different ALD approaches

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dc.contributor.authorKhomenkova, Larysa
dc.contributor.authorMerabet, H.
dc.contributor.authorChauvat, M.-P.
dc.contributor.authorFrilay, C.
dc.contributor.authorPortier, Xavier
dc.contributor.authorLabbe, C.
dc.contributor.authorMarie, P.
dc.contributor.authorCardin, J.
dc.contributor.authorBoudin, S.
dc.contributor.authorRueff, J.-M.
dc.contributor.authorGourbilleau, F.
dc.date.accessioned2022-12-09T12:46:09Z
dc.date.available2022-12-09T12:46:09Z
dc.date.issued2022
dc.description.abstractThe effect of Er precursor nature (Er(CpMe)3 or Er(tmhd)3) and annealing treatment at 500–1100 ◦C on the structural and optical properties of Er2O3 films grown on Si substrates by thermal or O2-plasma-assisted atomic layer deposition was studied by means of spectroscopic ellipsometry, Fourier-transform infrared spectroscopy, Xray diffraction, transmission electron microscopy coupled with energy dispersive X-ray spectroscopy as well as photoluminescence method. An annealing at 500–800 ◦C resulted in the film crystallization mainly. Thermal treatment at high temperatures caused the formation of Er silicate phase due to the diffusion of Si atoms from the substrate in the films depth. This phase was found to be Er2SiO5 being crystallized at 1100 ◦C. Light emitting properties of the films are determined by Er2O3 native defects (like oxygen vacancies) and intra-4f shell transition in Er3+ ions. The latter dominated in the films annealed at 1000–1100 ◦C. The most intense Er3+ emission, observed in the films grown with O2-plasma-assisted approach, was explained by a lower contribution of oxygen vacancies as well as by pronounced crystallization of Er silicate phase. In this latter, the effect of concentration quenching of Er3+ luminescence was lower due to a larger distance between Er3+ neighbor ions.en_US
dc.identifier.citationComprehensive investigation of Er2O3 thin films grown with different ALD approaches / L. Khomenkova, H. Merabet, M.-P. Chauvat, C. Frilay, X. Portier, C. Labbe, P. Marie, J. Cardin, S. Boudin, J.-M. Rueff, F. Gourbilleau // Surfaces and Interfaces. - 2022. - Vol. 34. - Article number 102377. - https://doi.org/10.1016/j.surfin.2022.102377en_US
dc.identifier.issn2468-0230
dc.identifier.urihttps://doi.org/10.1016/j.surfin.2022.102377
dc.identifier.urihttps://ekmair.ukma.edu.ua/handle/123456789/24336
dc.language.isoenuk_UA
dc.relation.sourceSurfaces and Interfacesen_US
dc.statusfirst publisheduk_UA
dc.subjectEr2O3en_US
dc.subjectthin filmsen_US
dc.subjectatomic layer depositionen_US
dc.subjectTEMen_US
dc.subjectXRDen_US
dc.subjectluminescenceen_US
dc.subjectEr silicateen_US
dc.subjectarticleen_US
dc.titleComprehensive investigation of Er2O3 thin films grown with different ALD approachesen_US
dc.typeArticleuk_UA
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