Light-emitting properties of bn synthesized by different techniques

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dc.contributor.authorRudko, Galyna
dc.contributor.authorSartinska, Lina
dc.contributor.authorIsaieva, Oksana
dc.contributor.authorGule, Evgen
dc.contributor.authorEren, Tarik
dc.contributor.authorAltay, Esra
dc.date.accessioned2021-03-11T09:55:05Z
dc.date.available2021-03-11T09:55:05Z
dc.date.issued2020
dc.description.abstractLight-emitting properties of boron nitride powders of different morphology grown using various techniques have been studied. All samples were hexagonal BN (h-BN), while the content of impurity phases varied considerably. The wide photoluminescence band in the visible range has been observed. h-BN synthesized using carbothermal reduction method exhibited the highest efficiency of the photoluminescence emission. The intensity of BN emission has been interpreted in terms of interplay between the emission of intrinsic defects stabilized by carbon, carbon-related recombination centers and the centers of non-radiative recombination caused by the presence of sassolite phases in the samples.en_US
dc.identifier.citationLight-emitting properties of bn synthesized by different techniques / Rudko G. Y., Sartinska L. L., Isaieva O. F., Gule E. G., Eren T., Altay E. // Semiconductor Physics, Quantum Electronics and Optoelectronics. - 2020. - Vol. 23, Issue 2. - P. 193-200.en_US
dc.identifier.urihttps://doi.org/10.15407/spqeo23.02.193
dc.identifier.urihttps://ekmair.ukma.edu.ua/handle/123456789/19610
dc.language.isoenuk_UA
dc.relation.sourceSemiconductor Physics, Quantum Electronics and Optoelectronics.en_US
dc.statusfirst publisheduk_UA
dc.subjectboron nitrideen_US
dc.subjectnanostructuresen_US
dc.subjectXRDen_US
dc.subjectSEMen_US
dc.subjectphotoluminescenceen_US
dc.subjectarticleen_US
dc.titleLight-emitting properties of bn synthesized by different techniquesen_US
dc.typeArticleuk_UA
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