Theoretical modeling of the excitation and propagation of surface phonon (plas monphonon) polaritons in MgxZrij_xO/6H-SiC structure was performed using a multi-oscillator model, which takes into account the additive contribution of the phonon and plasmon-pho- non subsystem parameters to the dielectric permittivity of the material. The simulation was carried out for both Mg^n^O films and 6H-SiC substrates with different free carrier concentrations. It was determined the frequency windows where surface polaritons of different types can be excited. The dispersion dependences for Мд^п^О/бН-SiC structure were obtained taking into account the interaction of the phonon and plas mon-phonon subsystems of the film and the substrate. A three-dimensional representation of reflection coefficient of this structure was constructed.