Markevich, I.Korsunska, N.Stara, T.Polishchuk, Yu.Vorona, I.Kozoriz, K.Ponomaryov, S.Melnichuk, O.Melnichuk, L.Cremades, A.Khomenkova, Larysa2023-10-062023-10-062023Optical properties of Zn0.75Mg0.25O:Mn ceramics / I. Markevich, N. Korsunska, T. Stara, Yu. Polishchuk, I. Vorona, K. Kozoriz, S. Ponomaryov, O. Melnichuk, L. Melnichuk, A. Cremades, L. Khomenkova // Optical Materials. - 2023. - Vol. 143. - Article number 114273. - https://doi.org/10.1016/j.optmat.2023.1142730925-3467https://doi.org/10.1016/j.optmat.2023.114273https://ekmair.ukma.edu.ua/handle/123456789/26342Mn-doped ZnO, MgO and Zn0.75Mg0.25O samples ([Mn] = 0.1 at.%) were produced by conventional solid-state technique and investigated by means of XRD, EPR, absorption, photocurrent, photo- and cathodoluminescence methods. It was shown that Zn0.75Mg0.25O solid solution with hexagonal structure has the bandgap of Eg ~3.65 eV. The quenching of host defect-related luminescence in ZnO:Mn and in hexagonal Zn0.75Mg0.25O:Mn was observed, while the Mn-related emission being absent. The energy level of Mn2Z+n center in hexagonal Zn0.75Mg0.25O:Mn was found to be at 2.16 eV below conduction band (c-band) bottom and all excited states of Mn2Z+n ions, including the lowest one, reside in c-band, as it takes place in ZnO:Mn. It is concluded that the necessary condition to obtain Mn-related light emission in Mn-doped alloys is to make deeper the lowest excited level of Mn2Z+n ions. One of the solutions is to produce Zn1-xMgxO:Mn solid solution with the bandgap energy larger than 4.0 eV using nonequilibrium fabrication approaches.enceramicsoxidesluminescenceX-ray diffractionElectron spin resonancearticleArticle